ONSEMI MSD-601ST1G | 搜芯易Sourcengine

ONSEMI MSD-601ST1G

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

VCEsat-Max
0.5 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
290
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
0.2 W
Time@Peak Reflow Temperature-Max (s)
30