MSCSM120TAM11CTPAG
Microsemi Corporation
- 生命周期状态Transferred
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 251A I(D), 1200V, 0.0104ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X26
- Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals26
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1042
- Drain Current-Max (ID) (A)251
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Pulsed Drain Current-Max (IDM) (A)500
- Drain-source On Resistance-Max (ohm)0.0104
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MSCSM120TAM11CTPAG
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