Microsemi Corporation MSAHR36F120A | 搜芯易Sourcengine

Microsemi Corporation MSAHR36F120A

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
60 ns
Turn-off Time-Nom (toff)
390 ns
Collector Current-Max (IC)
36 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED