ADVANCED POWER TECHNOLOGY INC MS3303 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC MS3303

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 2-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
COMMON BASE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
2
Power Gain-Min (Gp)
7.4 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
1.47 A
Transistor Element Material
SILICON