Microsemi Corporation MS2202 | 搜芯易Sourcengine

Microsemi Corporation MS2202

生命周期状态
EOL
说明
RF TRANS NPN 3.5V 1.15GHZ M115
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Finish
TIN LEAD
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.25 A
Power Dissipation-Max (Abs)
10 W
Transistor Element Material
SILICON