ADVANCED POWER TECHNOLOGY INC MS2176 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC MS2176

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-CDFM-F2
Configuration
SINGLE
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
875
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
21.6
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
28