Samsung Semiconductor, Inc. MS18R1624AH0-CK8 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. MS18R1624AH0-CK8

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Rambus DRAM Module, 64MX18, 45ns, CMOS
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
BLOCK ORIENTED PROTOCOL
JESD-30 Code
R-XDMA-N160
Memory Width
18
Organization
64MX18
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
1207959552 bit
Memory IC Type
RAMBUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.635 mm
Access Time-Max
45 ns
Number of Ports
1
Number of Words
67108864 words
Terminal Position
DUAL
Additional Feature
SELF CONTAINED REFRESH
Supply Current-Max
1040 mA
Number of Functions
1
Number of Terminals
160
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM160,25
Supply Voltage-Max (Vsup)
2.63 V
Supply Voltage-Min (Vsup)
2.37 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
800 MHz
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED