Microsemi Corporation MS1533 | 搜芯易Sourcengine

Microsemi Corporation MS1533

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
25 A
Power Dissipation-Max (Abs)
310 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
30 V
Collector-base Capacitance-Max
100 pF