Microsemi Corporation MS1279 | 搜芯易Sourcengine

Microsemi Corporation MS1279

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
RADIAL
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
140 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
35 V
Collector-base Capacitance-Max
85 pF