Microsemi Corporation MS1278 | 搜芯易Sourcengine

Microsemi Corporation MS1278

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F8
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
16 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
33 V
Collector-base Capacitance-Max
80 pF