Microsemi Corporation MS1277 | 搜芯易Sourcengine

Microsemi Corporation MS1277

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CXFM-F6
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
UNSPECIFIED
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
140 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
35 V
Collector-base Capacitance-Max
80 pF