Microsemi Corporation MS1255 | 搜芯易Sourcengine

Microsemi Corporation MS1255

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-XRFM-F6
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
WITH DIFFUSE BALLAST RESISTOR
Number of Elements
1
Number of Terminals
6
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
25
Power Dissipation-Max (W)
183
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
18