ADVANCED POWER TECHNOLOGY INC MS1252 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC MS1252

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 2-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-PRPM-F4
Configuration
COMMON EMITTER, 2 ELEMENTS
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
135