ADVANCED POWER TECHNOLOGY INC MS1251 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC MS1251

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-PXFM-F6
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Additional Feature
WITH DIFFUSED EMITTER RESISTOR
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
6
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
135