Motorola,Inc. MRW53505 | 搜芯易Sourcengine

Motorola,Inc. MRW53505

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Additional Feature
DIFFUSED BALLAST RESISTORS
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
6 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
2 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
22 V
Transition Frequency-Nom (fT)
3000 MHz
Collector-base Capacitance-Max
10 pF