Motorola,Inc. MRW2003F | 搜芯易Sourcengine

Motorola,Inc. MRW2003F

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F2
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Position
RADIAL
Additional Feature
DIFFUSED BALLAST RESISTORS
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
8 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.5 A
Transistor Element Material
SILICON
Collector-base Capacitance-Max
5 pF