Freescale Semiconductor, Inc. MRFG35003MT1 | 搜芯易Sourcengine

Freescale Semiconductor, Inc. MRFG35003MT1

生命周期状态
Transferred
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PQFP-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Power Gain-Min (Gp) (dB)
10
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
8.1
Time@Peak Reflow Temperature-Max (s)
40