Motorola,Inc. MRF966 | 搜芯易Sourcengine

Motorola,Inc. MRF966

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PRDB-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.08 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
10 V
Operating Temperature-Max
125 Cel
Power Dissipation-Max (Abs)
0.35 W
Transistor Element Material
GALLIUM ARSENIDE