Motorola,Inc. MRF873S | 搜芯易Sourcengine

Motorola,Inc. MRF873S

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFP-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Power Gain-Min (Gp)
7 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
2.4 A
Power Dissipation-Max (Abs)
44 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
16.5 V
Collector-base Capacitance-Max
25 pF