Motorola,Inc. MRF860 | 搜芯易Sourcengine

Motorola,Inc. MRF860

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F4
Configuration
COMMON EMITTER, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Power Gain-Min (Gp)
11 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
200 Cel
Power Dissipation-Max (Abs)
71 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
30 V
Power Dissipation Ambient-Max
71 W
Collector-base Capacitance-Max
28 pF