Motorola,Inc. MRF8372R1 | 搜芯易Sourcengine

Motorola,Inc. MRF8372R1

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Power Gain-Min (Gp)
8 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.2 A
Power Dissipation-Max (Abs)
1.7 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
16 V
Power Dissipation Ambient-Max
1.67 W
Collector-base Capacitance-Max
2.5 pF