Freescale Semiconductor, Inc. MRF6S19100NR1 | 搜芯易Sourcengine

Freescale Semiconductor, Inc. MRF6S19100NR1

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDFP-F4
Configuration
SINGLE
JEDEC-95 Code
TO-270
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Dissipation-Max (W)
287
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
68
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Time@Peak Reflow Temperature-Max (s)
40