MRF6S19060NBR1
Freescale Semiconductor, Inc.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明RF POWER N-CHANNEL, MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-PDFM-F4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-272
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min68 V
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level3
- Power Dissipation-Max (Abs)208 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
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MRF6S19060NBR1