Motorola,Inc. MRF660 | 搜芯易Sourcengine

Motorola,Inc. MRF660

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-220AB
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
EMITTER
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
5.4 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
2.4 A
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
16 V
Collector-base Capacitance-Max
25 pF