MRF5S9100NBR1
Motorola,Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDFM-F4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-272
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min68 V
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)336 W
- Transistor Element MaterialSILICON
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