MRF5S19130SR3
Motorola,Inc.
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFP-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Power Dissipation-Max (W)324
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)200
MRF5S19130SR3有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
MRF5S19130SR3
提交询价
MRF5S19130SR3