ASI Semiconductor, Inc. MRF587 | 搜芯易Sourcengine

ASI Semiconductor, Inc. MRF587

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Bipolar Transistors RF Transistor
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
11
DC Current Gain-Min (hFE)
50
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.2
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
17
Collector-base Capacitance-Max (pF)
2.2