Motorola,Inc. MRF547 | 搜芯易Sourcengine

Motorola,Inc. MRF547

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-117
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
JEDEC-95 Code
TO-117
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
PNP
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.6 A
Power Dissipation-Max (Abs)
9 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
70 V
Power Dissipation Ambient-Max
9 W
Collector-base Capacitance-Max
4.5 pF