Motorola,Inc. MRF5003 | 搜芯易Sourcengine

Motorola,Inc. MRF5003

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CXMW-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
9.5 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.7 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
5.4 pF
DS Breakdown Voltage-Min
36 V
Operating Temperature-Max
200 Cel
Power Dissipation-Max (Abs)
12.5 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
12.5 W
Drain-source On Resistance-Max
0.75 ohm