ASI Semiconductor, Inc. MRF479 | 搜芯易Sourcengine

ASI Semiconductor, Inc. MRF479

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
155