Freescale Semiconductor, Inc. MRF373AS | 搜芯易Sourcengine

Freescale Semiconductor, Inc. MRF373AS

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
70 V
Operating Temperature-Max
200 Cel
Power Dissipation-Max (Abs)
278 W
Transistor Element Material
SILICON