ASI Semiconductor, Inc. MRF323 | 搜芯易Sourcengine

ASI Semiconductor, Inc. MRF323

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-XRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
55
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2.2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
33
Collector-base Capacitance-Max (pF)
24