Freescale Semiconductor, Inc. MRF18060ASR3 | 搜芯易Sourcengine

Freescale Semiconductor, Inc. MRF18060ASR3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Additional Feature
HIGH EFFICIENCY
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
65 V
Operating Temperature-Max
200 Cel
Power Dissipation-Max (Abs)
180 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40