Freescale Semiconductor, Inc. MRF1570T1 | 搜芯易Sourcengine

Freescale Semiconductor, Inc. MRF1570T1

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDFM-F8
Configuration
COMMON SOURCE, 2 ELEMENTS
JEDEC-95 Code
TO-272
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
165
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Time@Peak Reflow Temperature-Max (s)
40