Motorola,Inc. MRF15030 | 搜芯易Sourcengine

Motorola,Inc. MRF15030

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
9
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
125
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
25
Power Dissipation Ambient-Max (W)
125
Collector-base Capacitance-Max (pF)
50