Motorola,Inc. MRF1008MB | 搜芯易Sourcengine

Motorola,Inc. MRF1008MB

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.5 A
Power Dissipation-Max (Abs)
12 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
20 V
Collector-base Capacitance-Max
6 pF