Motorola,Inc. MRF1004MB | 搜芯易Sourcengine

Motorola,Inc. MRF1004MB

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
10
DC Current Gain-Min (hFE)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.25
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
20
Collector-base Capacitance-Max (pF)
5