Toshiba Corporation MPS2907ATPE1 | 搜芯易Sourcengine

Toshiba Corporation MPS2907ATPE1

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-92
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
JEDEC-95 Code
TO-92
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.6
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
50
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
45
Turn-off Time-Max (toff) (ns)
100
Collector Current-Max (IC) (A)
0.6
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
60
Power Dissipation Ambient-Max (W)
1.5
Collector-base Capacitance-Max (pF)
8
Transition Frequency-Nom (fT) (MHz)
200