Motorola,Inc. MPM3002 | 搜芯易Sourcengine

Motorola,Inc. MPM3002

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 12A I(D), 100V, 0.15ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T12
Configuration
COMPLEX
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
CURRENT SENSING
Number of Elements
4
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
12 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
160 ns
Feedback Cap-Max (Crss)
200 pF
DS Breakdown Voltage-Min
100 V
Turn-off Time-Max (toff)
245 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
62.5 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
62.5 W
Drain-source On Resistance-Max
0.15 ohm
Pulsed Drain Current-Max (IDM)
30 A