Toshiba Corporation MP6403 | 搜芯易Sourcengine

Toshiba Corporation MP6403

生命周期状态
Active-Unconfirmed
说明
Power Field-Effect Transistor, 5A I(D), 60V, 0.2ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T12
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
6
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
240
Power Dissipation Ambient-Max
36 W
Drain-source On Resistance-Max
0.2 ohm
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED