SENSITRON SEMICONDUCTOR MOD2010S | 搜芯易Sourcengine

SENSITRON SEMICONDUCTOR MOD2010S

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 35A I(D), 100V, 0.055ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-P12
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
6
Number of Terminals
12
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
35
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.055
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED