MOD200B
SILICONIX INC
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 21A I(D), 4-Element, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements4
- Drain Current-Max (ID)21 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
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MOD200B
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MOD200B