VISHAY SILICONIX MOD100A | 搜芯易Sourcengine

VISHAY SILICONIX MOD100A

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 21A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
S-MDFM-P12
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
4
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
21 A
Turn-on Time-Max (ton)
135 ns
Feedback Cap-Max (Crss)
500 pF
DS Breakdown Voltage-Min
100 V
Turn-off Time-Max (toff)
225 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
400 W
Drain-source On Resistance-Max
0.08 ohm
Pulsed Drain Current-Max (IDM)
125 A