Samsung Semiconductor, Inc. MN18R3268AF0-CM8 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. MN18R3268AF0-CM8

生命周期状态
Discontinued
说明
Rambus DRAM Module, 256MX18, CMOS
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
BLOCK ORIENTED PROTOCOL
JESD-30 Code
R-XXMA-X200
Memory Width
18
Organization
256MX18
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Memory Density
4831838208 bit
Memory IC Type
RAMBUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Number of Words
268435456 words
Terminal Position
UNSPECIFIED
Additional Feature
SELF CONTAINED REFRESH
Number of Functions
1
Number of Terminals
200
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Supply Voltage-Max (Vsup)
2.63 V
Supply Voltage-Min (Vsup)
2.37 V
Supply Voltage-Nom (Vsup)
2.5 V