IXYS Corporation MMIX4B22N300 | 搜芯易Sourcengine

IXYS Corporation MMIX4B22N300

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBTs smpdb 3kv 22a igbt
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PDSO-G9
Configuration
Full Bridge
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2.7
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
4
Number of Terminals
9
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
743
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1870
Collector Current-Max (IC) (A)
38
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
3000