IXYS Corporation MMIX1G75N250 | 搜芯易Sourcengine

IXYS Corporation MMIX1G75N250

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-PDSO-G21
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
21
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
430
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
280
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
725
Collector Current-Max (IC) (A)
110
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
2500