MAGNACHIP SEMICONDUCTOR LTD MMFU80R1K2PBTH | 搜芯易Sourcengine

MAGNACHIP SEMICONDUCTOR LTD MMFU80R1K2PBTH

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 4.5A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
SUPERJUNCTION MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
28.4
Drain Current-Max (ID) (A)
4.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
800
Feedback Cap-Max (Crss) (pF)
16.4
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
170
Pulsed Drain Current-Max (IDM) (A)
13.5
Drain-source On Resistance-Max (ohm)
1.2
Screening Level / Reference Standard
UL RECOGNIZED