ONSEMI MMBTH11 | 搜芯易Sourcengine

ONSEMI MMBTH11

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 25V 0.05A 3-Pin SOT-23 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.05 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.35 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
25 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
650 MHz
Collector-base Capacitance-Max
0.7 pF
Time@Peak Reflow Temperature-Max (s)
30