ONSEMI MMBTA20LT1 | 搜芯易Sourcengine

ONSEMI MMBTA20LT1

生命周期状态
Discontinued
说明
Trans GP BJT NPN 40V 0.1A 300mW 3-Pin SOT-23 T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.225 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
40 V
Peak Reflow Temperature (Cel)
235
Transition Frequency-Nom (fT)
125 MHz