UTC, Ltd. MMBT9018L-G-AE3-R | 搜芯易Sourcengine

UTC, Ltd. MMBT9018L-G-AE3-R

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
72
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.05
Collector-emitter Voltage-Max (V)
15
Power Dissipation Ambient-Max (W)
0.225
Collector-base Capacitance-Max (pF)
1.7
Transition Frequency-Nom (fT) (MHz)
1100
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED